Carrier lifetime versus ion-implantation dose in silicon on sapphire
- 23 February 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (8) , 460-462
- https://doi.org/10.1063/1.98173
Abstract
[[abstract]]We have measured the dependence of the free-carrier lifetime on O+ ion-implantation dose in silicon-on-sapphire. At low implant doses, the carrier trapping rate increased linearly with the trap density introduced by ion implantation. At doses above 3×1014 cm−2 the measured carrier lifetime reached a limit of 600 fs. Applied Physics Letters is copyrighted by The American Institute of Physics.[[fileno]]2010127010014[[department]]物理Keywords
This publication has 11 references indexed in Scilit:
- Generation of subpicosecond electrical pulses on coplanar transmission linesApplied Physics Letters, 1986
- Ultrafast heating of silicon on sapphire by femtosecond optical pulsesPhysical Review Letters, 1986
- Picosecond photoconducting Hertzian dipolesApplied Physics Letters, 1984
- Optical heating of electron-hole plasma in silicon by picosecond pulsesApplied Physics Letters, 1984
- Subpicosecond electrical samplingIEEE Journal of Quantum Electronics, 1983
- Time-Resolved Reflectivity Measurements of Femtosecond-Optical-Pulse-Induced Phase Transitions in SiliconPhysical Review Letters, 1983
- Observation of an electronic plasma in picosecond laser annealing of siliconApplied Physics Letters, 1982
- Picosecond photoconductivity in radiation-damaged silicon-on-sapphire filmsApplied Physics Letters, 1981
- Crystalline to amorphous transformation in ion-implanted silicon: a composite modelJournal of Applied Physics, 1978
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957