Investigations into the growth of AIN by MOCVD using trimethylsilylazide as nitrogen source

1 January 1994

journal article
research article
Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry

Vol. 4 (8) , 1245-1247
https://doi.org/10.1039/jm9940401245

Abstract

Thin films of AIN have been deposited by atmospheric-pressure MOCVD using trimethylaluminium (Me₃Al) and trimethylsilylazide (Me₃SiN₃) as precursors. The films were deposited at 300 or 450 °C and had growth rates of up to 3 µm h^–1

Keywords

NITROGEN
ME3SIN3
ME3AL
TRIMETHYLALUMINIUM
AIN BY MOCVD
GROWTH OF AIN
TRIMETHYLSILYLAZIDE