Interpreting interfacial structure in cross-sectional STM images of III–V semiconductor heterostructures
- 1 October 2000
- journal article
- Published by Elsevier in Surface Science
- Vol. 465 (3) , 361-371
- https://doi.org/10.1016/s0039-6028(00)00732-9
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Comparison of electronic and mechanical contrast in scanning tunneling microscopy images of semiconductor heterojunctionsPhysica B: Condensed Matter, 1999
- Determination of temperature dependence of GaSb absorption edge and its application for transmission thermometryJournal of Applied Physics, 1999
- Comparison betweenab initiotheory and scanning tunneling microscopy for (110) surfaces of III-V semiconductorsPhysical Review B, 1998
- Structure of InAs/AlSb/InAs resonant tunneling diode interfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopyApplied Physics Letters, 1998
- Correlation between atomic-scale structure and mobility anisotropy in superlatticesPhysical Review B, 1998
- Interface roughness effects on transport in tunnel structuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Interface composition dependence of the band offset in InAs/GaSbSemiconductor Science and Technology, 1996
- Interface roughness scattering in AlAs/InGaAs resonant tunneling diodes with an InAs subwellJournal of Applied Physics, 1996
- Influence of various growth parameters on the interface abruptness of AlAs/GaAs short period superlatticesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995