Photoluminescence of InP Doping Superlattice Grown by Vapor Phase Epitaxy
- 1 October 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (10A) , L785
- https://doi.org/10.1143/jjap.23.l785
Abstract
An InP doping superlattice structure has been fabricated by hydride vapor phase epitaxy with a multibarrel reactor, using Zn and S as dopants. Layer thickness and doping level were varied from 150 to 2000 Å and 0.5×1018 to 8×1018 cm-3, respectively. Although Zn dopant diffusion into the n-layers occurred in the fabricated samples, photoluminescent peak wavelength shifts due to the indirect carrier transition in real space were observed at 77 K.Keywords
This publication has 6 references indexed in Scilit:
- Tunable electroluminescence from GaAs doping superlatticesApplied Physics Letters, 1982
- Photoluminescence study of electron-hole recombination across the tunable effective gap in GaAs n-i-p-i superlatticesSolid State Communications, 1982
- Tunable absorption coefficient in GaAs doping superlatticesPhysical Review B, 1982
- The Use of Si and Be Impurities for Novel Periodic Doping Structures in GaAs Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1981
- Vapor Phase Growth of InGaAsP/InP DH Structures by the Dual-Growth-Chamber MethodJapanese Journal of Applied Physics, 1980
- Electrical and Optical Properties of Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972