Multiple-bonding configurations for oxygen on silicon surfaces
- 15 September 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (6) , 3651-3653
- https://doi.org/10.1103/physrevb.28.3651
Abstract
Using high-resolution core-level spectroscopy we show that up to four different oxidation states of silicon coexist even at monolayer oxygen coverage. This observation precludes current models with a single adsorption geometry. Below 0.2 monolayer coverage, a single oxidation state is seen but the (100) surface has an oxygen-bonding geometry different from the (111) surface evidenced by different valence states and work-function changes.Keywords
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