Hot electrons in MOS transistors: Lateral distribution of the trapped oxide charge
- 1 July 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (7) , 215-217
- https://doi.org/10.1109/edl.1982.25543
Abstract
The spatial distribution (along the channel) of the oxide-trapped charge induced by hot electron injection in MOS transistors biased in saturation, is studied by means of two-dimensional device simulators. It is shown that hot electron trapping leads to a charge almost uniformly distributed over the region included between the points of channel pinch-off and zero transversal component of the surface electric field. A simplified analytic expression for the drain current in the triode operating region of the HE modified transistor is also given and found to be in reasonable agreement with experimental curves.Keywords
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