Time-resolved photoluminescence study of molecular beam epitaxial growth induced defect lines in GaAs
- 1 August 1985
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (3) , 257-259
- https://doi.org/10.1063/1.96183
Abstract
A time‐resolved photoluminescence study of the ‘‘damage’’ lines often observed in molecular beam epitaxial GaAs shows two recent models of the origin of these lines to be incorrect. Our results show that the p through v lines have identical transient behavior which is significantly different from that of the g line. These measurements support the general conclusion of a recent excitation spectroscopy study that the g line is due to an acceptor bound exciton, but call for a reinterpretation of several of the lines related to g which leads to a new value for the g‐acceptor binding energy.Keywords
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