Dissociation of Vertical Semiconductor Diatomic Artificial Molecules
Open Access
- 18 July 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 87 (6) , 066801
- https://doi.org/10.1103/physrevlett.87.066801
Abstract
We investigate the dissociation of few-electron circular vertical semiconductor double quantum dot artificial molecules at 0 T as a function of interdot distance. A slight mismatch introduced in the fabrication of the artificial molecules from nominally identical constituent quantum wells induces localization by offsetting the energy levels in the quantum dots by up to 2 meV, and this plays a crucial role in the appearance of the addition energy spectra as a function of coupling strength particularly in the weak coupling limit.Keywords
All Related Versions
This publication has 38 references indexed in Scilit:
- Laterally coupled few-electron quantum dotsPhysical Review B, 2000
- Spin interactions and switching in vertically tunnel-coupled quantum dotsPhysical Review B, 2000
- Ellipsoidal deformation of vertical quantum dotsPhysical Review B, 1999
- Single-electron tunnelling in two vertically coupled quantum dotsJournal of Physics: Condensed Matter, 1999
- Formation of a Coherent Mode in a Double Quantum DotPhysical Review Letters, 1998
- Double-layered quantum dots in a magnetic field: The ground state and the far-infrared responsePhysical Review B, 1997
- Spectroscopy of the Single-Particle States of a Quantum-Dot MoleculePhysical Review Letters, 1997
- Quenched disorder, memory, and self-organizationPhysical Review E, 1996
- Born-Oppenheimer molecular-dynamics simulations of finite systems: Structure and dynamics of (OPhysical Review B, 1993
- Self-interaction correction to density-functional approximations for many-electron systemsPhysical Review B, 1981