Study of defects in optoelectronic materials using a scanning acoustic microscope
- 1 October 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (10) , 5711-5714
- https://doi.org/10.1063/1.331790
Abstract
We report a study of defects in some optoelectronic material of technological interest using a scanning acoustic microscope (SAM). Acoustic micrographs of InP, CdTe, and InGaAsP were compared with defect maps obtained by etching, cathodoluminescence (CL), or photoluminescence. Inclusions in InGaAsP were visible using the SAM. However, at low acoustic powers dislocations in InP and CdTe and dark line defects in InGaAsP were not visible. It was possible at high acoustic powers to create ‘‘acoustic etch pits’’ in CdTe which corresponded to defect areas as revealed by CL scans.This publication has 4 references indexed in Scilit:
- Optically induced catastrophic degradation in InGaAsP/InP layersApplied Physics Letters, 1982
- Evaluation of Defects in CdTe Using a Simple Cathodoluminescence TechniqueJournal of the Electrochemical Society, 1982
- Révélation métallographique des défauts cristallins dans InPJournal of Crystal Growth, 1975
- Acoustic microscope—scanning versionApplied Physics Letters, 1974