Improved luminescence quality with an asymmetric confinement potential in Si-based type-II quantum wells grown on a graded SiGe relaxed buffer
- 1 May 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (3) , 2387-2390
- https://doi.org/10.1116/1.588867