Si resonance transport device
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 387-390
- https://doi.org/10.1109/iedm.1990.237150
Abstract
A novel Si quantum device having controlled one-dimensional subbands was characterized experimentally in detail. In this device, the resonance transport effect between 1D subbands which are formed by dual layer gates is used as the device operating principle. The lower narrow gate produces the quantum conductive channel (quantum wire) with 1D subbands. The upper gate can change the effective channel width by applying negative bias, resulting in modulation of the transport characteristics. At 4.2 K, transconductance is found to show oscillatory behavior and negative differential resistance, which implies that resonance transport indeed occurs. It is suggested that resonance transport effects in Si will trigger new ULSI applications such as multifunctional circuits in the sub 0.1 mu m era.<>Keywords
This publication has 2 references indexed in Scilit:
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