Raman Scattering and Photoluminescence Tomography

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Abstract
Frequency shift and intensity of Raman scattering and photoluminescence are replicas of characteristic modes and concentration of impurities and/or defects in bulks, by which we can detect and analyze materials. Since their two dimensional mapping is very effective in characterizing materials, a microscope with a high resolution spectrometer is designed and developed by “streak-camera method ” rather than the “flying spot method ” usually used. Here, a specimen to be examined is moved in one direction only; that is, perpendicular to both the entrance slit and the optical axis of a spectrometer installed in the instrument. Some results obtained in a KDP (KH2PO4) crystal suggested the importance of transition regions between seed and crystal grown epitaxially on the seed.

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