Observation of a Non-Ohmic Hall Resistivity at Low Temperatures in a Two-Dimensional Electron Gas
- 2 February 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 46 (5) , 360-363
- https://doi.org/10.1103/physrevlett.46.360
Abstract
Hall measurements of electron inversion layers at low temperatures and electric fields are reported. For resistances of ≲ 10 kΩ/□ a logarithmic dependence of the Hall coefficient on temperature and Hall voltage is observed. This indicates that the logarithmic dependences observed for the resistance of metal films and metal-oxide-semiconductor field-effect transistors are not evidence for the scaling theory of localization. These results are also difficult to resolve within the theory of interaction effects by Altshuler, Aronov, and Lee.Keywords
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