Reactive ion etching of niobium

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Abstract
The reactive gases CBrF3 and CF4 have both been found to be effective in the reactive ion etching of niobium. At relatively high pressures, 100 mTorr, rapid etching with a small degree of undercutting occurs at moderate rf power levels. At lower pressures, higher rf power levels, ≳1 W/ cm2, are required but vertical edge profiles result. The RIE process can be useful in producing electrodes for Josephson circuits and superconducting microbridges.

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