Electron-beam lithography using vector-scan techniques

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Abstract
A computer-controlled electron-beam microfabrication system has been developed for evaluation of micron and submicron lithographic technologies. Direct large-field-device exposures of complex patterns have been processed for FET and bubble memory fabrication. Experimental exposures have also been made to allow mask fabrication for alternative exposure apparatus. The system exposes the electron-sensitive resist by sequentially filling in pattern elements (cells), whose geometry and size are determined by an off-line pattern data processor. Abutting line scans, using a round electron probe, are used to expose each cell. The system normally exposes fields up to 4 mm square. Deflection resolution is 14 bits per axis. Exposure rate, pattern registration, pattern field adjustments (size, position offset, rotation, and orthogonality), and workstage position are among the functions which have been automated.

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