Computer simulation of proton channeling catch‐up in bent crystals

1 February 1986

journal article
research article
Published by Wiley in Physica Status Solidi (b)

Vol. 133 (2) , 511-516
https://doi.org/10.1002/pssb.2221330210

Abstract

A detailed computer simulation of the catch‐up effect for a 1 GeV proton beam in a uniformly bent silicon crystal is performed. The dependences of the efficiency of proton catch‐up in the channeling regime on bending radius of the crystal and on incidence angle of the beam are reported.

Keywords

PROTON
COMPUTER SIMULATION
CHANNELING CATCH
CRYSTAL
BENDING RADIUS
UNIFORMLY BENT
INCIDENCE ANGLE

This publication has 2 references indexed in Scilit:

Possible applications of the steering of charged particles by bent single crystals
Nuclear Instruments and Methods in Physics Research, 1982
Modified Dechanneling Theory and Diffusion Coefficients
Physical Review B, 1973