Bonding configuration and defects in amorphous SiNx:H films
- 18 February 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (7) , 741-743
- https://doi.org/10.1063/1.104533
Abstract
Amorphous SiNx:H films were prepared by rf glow discharge of SiH4-NH3 mixtures at 300 °C, and the optical properties and the density Ns of Si dangling bonds obtained from electron spin resonance were investigated as a function of the N content x. The slope E0 in the Urbach form of the absorption coefficient and Ns, respectively, have a maximum at x=1.2 and 0.7. The dependence of E0 on x was examined on the basis of the random-bonding model including H atoms, and the dependence of Ns was connected with the optical gap and E0, according to the weak-bond dangling-bond conversion model.Keywords
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