Alignment of x-ray lithography masks using a new interferometric technique—Experimental results

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Abstract
A new interferometric alignment technique has been developed that is compatible with both photolithography and x‐ray lithography, and should be capable of a superposition precision of the order of 100 . The operational features of the technique and experimental results are described. With gratings of 10‐μm spatial period a superposition precision ?1000 Å has been demonstrated, and with gratings of 1.2‐μm spatial period a superposition precision of about 200 Å has been achieved.

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