Design of semiconductor electrooptic directional coupler with the beam propagation method
- 1 February 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 7 (2) , 385-389
- https://doi.org/10.1109/50.17784
Abstract
The design of a low-loss switching voltage double-heterostructure electrooptic coupler switch in III-V semiconductor materials is discussed. The optical propagation is analyzed by the effective index method combined with the beam propagation method. The electrostatic field and electron and hole distributions are analyzed by a numerical simulation. This model is in good agreement with experimental results obtained at 1.56 mu m on directional couplers made of GaAs-GaAlAs DH waveguides and Schottky barrier electrodes.Keywords
This publication has 11 references indexed in Scilit:
- Low loss InGaAs/InP multiple quantum well waveguidesApplied Physics Letters, 1986
- Optimum overlap of electric and optical fields in semiconductor waveguide devicesApplied Physics Letters, 1986
- Ether: A software simulating the electrical behaviour of heterostructure devicesPhysica B+C, 1985
- Refractive index of In1−xGaxAsyP1−y layers and InP in the transparent wavelength regionJournal of Applied Physics, 1984
- Infrared reflectance and absorption of N-type InPJournal of Electronic Materials, 1983
- The beam propagation method: an analysis of its applicabilityOptical and Quantum Electronics, 1983
- Electro-optical light modulation in InGaAsP/InP double heterostructure diodesApplied Physics Letters, 1983
- Time-dependent propagation of high energy laser beams through the atmosphereApplied Physics A, 1976
- Electro-optically switched coupler with stepped Δβ reversal using Ti-diffused LiNbO3 waveguidesApplied Physics Letters, 1976
- Theory of parametric oscillation phase matched in GaAs thin-film waveguidesIEEE Journal of Quantum Electronics, 1972