Radiation Damage Effects of Electrons and H, He, O, Cl and Cu Ions on GaAs JFETs
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 32 (6) , 4388-4392
- https://doi.org/10.1109/tns.1985.4334129
Abstract
Radiation damage effects have been studied in GaAs EJFETs for a variety of different energetic particles. Differences in damage rates are consistent with simple displacement damage and carrier removal.Keywords
This publication has 6 references indexed in Scilit:
- Single Event Upset Measurements of Gaas E-JFET RAMSIEEE Transactions on Nuclear Science, 1983
- Use of an Ion Microbeam to Study Single Event Upsets in MicrocircuitsIEEE Transactions on Nuclear Science, 1981
- Differential cross section and related integrals for the molière potentialRadiation Effects, 1980
- Femtojoule high speed planar GaAs E-JFET logicIEEE Transactions on Electron Devices, 1978
- Depth distribution of energy deposition by ion bombardmentComputer Physics Communications, 1974
- Theorie der Streuung schneller geladener Teilchen I. Einzelstreuung am abgeschirmten Coulomb-FeldZeitschrift für Naturforschung A, 1947