Bias dependence of the MODFET intrinsic model elements values at microwave frequencies
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (10) , 2267-2273
- https://doi.org/10.1109/16.40909
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETsIEEE Electron Device Letters, 1989
- A new method for determining the FET small-signal equivalent circuitIEEE Transactions on Microwave Theory and Techniques, 1988
- 0.1 μm gate length MODFETs with unity current gain cutoff frequency above 110 GHzElectronics Letters, 1988
- Determination of the MESFET Resistive Parameters using Rf-Wafer ProbingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- High-frequency limits of millimeter-wave transistorsIEEE Electron Device Letters, 1986
- New method to measure the source and drain resistance of the GaAs MESFETIEEE Electron Device Letters, 1986
- Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET'sIEEE Transactions on Electron Devices, 1985
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980
- Determination of the Basic Device Parameters of a GaAs MESFETBell System Technical Journal, 1979
- Dynamic Performance of Schottky-barrier Field-effect TransistorsIBM Journal of Research and Development, 1970