Comparison of etch rates of silicon nitride, silicon dioxide, and polycrystalline silicon upon O2 dilution of CF4 plasmas
- 1 November 1989
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 7 (6) , 1352-1356
- https://doi.org/10.1116/1.584537
Abstract
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