Experimental arguments for the identity of EL6 with the 0.13 eV donor in bulk n-GaAs
- 1 October 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (10) , 1029-1031
- https://doi.org/10.1088/0268-1242/6/10/014
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Negative-U, off-centerin GaAs and its relation to theEL3 levelPhysical Review B, 1991
- Detection of deep levels and compensation mechanism in undoped, liquid-encapsulated Czochralski n-type GaAsJournal of Applied Physics, 1991
- Role of Electron Traps on the Thermal Conversion and Its Suppression for Liquid-Encapsulated Czochralski GaAs Single CrystalsJapanese Journal of Applied Physics, 1989
- Characterisation of deep electron states in LEC grown GaAs materialSemiconductor Science and Technology, 1989
- Effects of melt composition on deep electronic states and compensation ratios inn-type LEC gallium arsenideJournal of Electronic Materials, 1989
- Undoped Semi-Insulating GaAs of Very Low Residual Acceptor ConcentrationJapanese Journal of Applied Physics, 1988
- Deep levels in semiconducting In-alloyed bulk n-GaAs and its resistivity conversions by thermal treatmentsApplied Physics Letters, 1988
- Semiconducting/semi-insulating reversibility in bulk GaAsApplied Physics Letters, 1986
- Oxygen-related gettering of silicon during growth of bulk GaAs Bridgman crystalsJournal of Physics C: Solid State Physics, 1982
- Schottky-barrier capacitance measurements for deep level impurity determinationSolid-State Electronics, 1973