A simplified thermal model for calculating the maximum output power from a 1.3-μm buried heterostructure laser

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Abstract
A one-dimensional thermal model is presented for calculating the maximum output power from InGaAsP/InP (λ=1.3 μm) buried heterostructure lasers, whose output power is limited by thermal considerations. The effect of Auger recombination and ohmic resistance, which play significant roles in these lasers at high temperatures, is included. We have also incorporated the temperature dependence of efficiency from first principles using experimentally available data for Auger and radiative recombination coefficients. Calculations made on InGaAsP/InP lasers show that a maximum cw power of 57 mW/facet (diamond heat sink) and a maximum operating temperature of up to 132 °C for a geometry similar to the double-channel buried heterostructure laser can be achieved. In addition, the model has been used to determine the maximum achievable power as a function of device geometry (active layer thickness, width, and length of the device). We find that by increasing the length of the laser from 300 to 700 μm we can increase the output power of the laser by 79%. The results obtained agree reasonably well with experiment.