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Recent developments in the strained layer epitaxy of germanium–silicon alloys
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Recent developments in the strained layer epitaxy of germanium–silicon alloys
Recent developments in the strained layer epitaxy of germanium–silicon alloys
JB
John C. Bean
John C. Bean
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1 November 1986
journal article
Published by
American Vacuum Society
in
Journal of Vacuum Science & Technology B
Vol. 4
(6)
,
1427-1429
https://doi.org/10.1116/1.583468
Abstract
No abstract available
Cited
Cited by 34 articles
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