High-power, high-efficiency silicon avalanche diodes at ultra high frequencies

1 April 1967

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 55 (4) , 586-587
https://doi.org/10.1109/PROC.1967.5609

Abstract

Silicon avalanche diodes with a pnn⁺mesa structure were made according to suitably chosen design parameters, and carefully fabricated to meet stringent pedormance specifications. Operating under pulse conditions with a duty factor of approximately 10^-3, efficiencies as high as 25 percent, and power outputs up to 435 watts at 425 megahertz, were achieved.

Keywords

SILICON
DIODES
RADIO FREQUENCY
TESTING
L-BAND
ETCHING
COAXIAL COMPONENTS
CIRCUITS
SPACE VECTOR PULSE WIDTH MODULATION
LOW PASS FILTERS

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