Cyclotron-resonance oscillations in InAs quantum wells
- 15 November 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (10) , 7463-7466
- https://doi.org/10.1103/physrevb.34.7463
Abstract
The cyclotron resonance of a two-dimensional electron gas in an InAs quantum well sandwiched between two GaSb layers has been investigated experimentally for its dependence on the magnetic field. Both the amplitude and the half-width of the resonance show a strong oscillatory behavior, exhibiting a maximum amplitude and correspondingly a minimum half-width when the highest occupied Landau level is half filled. Oscillations for more than ten periods have been observed. From our experiments we can deduce that there is a considerable overlap of the Landau levels, which strongly increases with decreasing magnetic field.Keywords
This publication has 16 references indexed in Scilit:
- Conductivity, plasmon, and cyclotron-resonance anomalies in Si(100) metal-oxide-semiconductor systemsPhysical Review B, 1985
- Cyclotron resonance in two dimensionsPhysical Review B, 1984
- Calculation of the cyclotron resonance linewidth in GaAsAlGaAs heterostructuresSolid State Communications, 1983
- Observation of oscillatory linewidth in the cyclotron resonance of GaAsAlxGa1−xAs heterostructuresSolid State Communications, 1983
- Magneto-Polarons in a Two-Dimensional Electron Inversion Layer on InSbPhysical Review Letters, 1983
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Cyclotron Resonance and Far-Infrared Magneto-Absorption Experiments on Semimetallic InAs-GaSb SuperlatticesPhysical Review Letters, 1980
- Theory of Cyclotron Resonance Lineshape in a Two-Dimensional Electron SystemJournal of the Physics Society Japan, 1975
- Cyclotron resonance of electrons in localized surface statesZeitschrift für Physik B Condensed Matter, 1975
- Cyclotron Resonance of Electrons in an Inversion Layer on SiPhysical Review Letters, 1974