Influence of interface states on the capacitance of homo- and heterojunctions
- 1 May 1967
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 3 (5) , 218-220
- https://doi.org/10.1049/el:19670168
Abstract
The difference between the calculated and the measured built-in voltage for homo- and heterojunctions is explained by introducing interface states in the vicinity of the metallurgical junction. A general formula is derived for the depletion-layer capacitance of abrupt junctions with interface states.Keywords
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