Optical band gap of the filled tetrahedral semiconductor LiMgAs
- 15 March 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (6) , 3168-3170
- https://doi.org/10.1063/1.372316
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Optical band gap of the ordered filled-tetrahedral semiconductor LiMgPSolid State Communications, 1998
- Optical band gap of the filled tetrahedral semiconductor LiZnAsPhysical Review B, 1994
- Optical band gap of the filled tetrahedral semiconductor LiZnPPhysical Review B, 1988
- Preparation and characterization of some AIBIICV type semiconductorsApplied Physics Letters, 1988
- Electronic structure of LiZnN: Interstitial insertion rulePhysical Review B, 1985
- Electronic structure of filled tetrahedral semiconductorsPhysical Review B, 1985
- Predicted Modifications in the Direct and Indirect Gaps of Tetrahedral SemiconductorsPhysical Review Letters, 1984
- Ternary Nitrides, Phosphides, and Arsenides of LithiumAngewandte Chemie International Edition in English, 1968
- On the unreliability of the `reliability index'Acta Crystallographica, 1956
- Die Verbindungen LiMgP, LiZnP und LiZnAsMonatshefte für Chemie / Chemical Monthly, 1950