Maximization of DRAM yield by control of surface charge and particle addition during high dose implantation
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1) , 154-159
- https://doi.org/10.1016/0168-583x(91)96153-c
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Charging and charge neutralization in ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989