Monolithic GaInAs/InP FET inverter amplifiers for long-wavelength OEICs

13 October 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (21) , 1349-1351
https://doi.org/10.1049/el:19880918

Abstract

Monolithically integrated inverter amplifiers based on MOCVD-grown GaInAs/InP heterojunction FETs have been made. 1 μm-gate-length FETs exhibited a typical pinchoff voltage of −1.5V, transconductance of 160mS/mm and DC drain conductance of 2–4mS/mm, at zero gate bias. Amplifier voltage gain as high as 27 was measured at DC, dropping to 11 above 1 MHz due to the presence of an extra frequency-dependent drain conductance component.

Keywords

III-V SEMICONDUCTORS
INTEGRATED OPTOELECTRONICS
DC DRAIN CONDUCTANCE
MONOLITHIC IC
TRANSCONDUCTANCE
FET INVERTER AMPLIFIERS
1 MICRON
LONG-WAVELENGTH OEICS
GAINAS-INP
-1.5 V
PINCH-OFF VOLTAGE
OPTICAL RECEIVERS
2 TO 4 MS
JFET
MICRON GATE LENGTH
MOCVD GROWN HETEROJUNCTION DEVICES
160 MS

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