High efficiency visible single mode laser diodes
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 101-102
- https://doi.org/10.1109/islc.1994.519154
Abstract
We report low threshold and high efficiency operation of 660 nm band single mode InGaP QW laser diodes. The threshold currents are as low as 13 mA. External differential quantum efficiencies greater than 80% are reported Author(s) Geels, Randall S. Spectra Diode Labs., San Jose, CA, USA Plano, W.E. ; Welch, D.F.Keywords
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