An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
- 1 September 1962
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 5 (5) , 285-299
- https://doi.org/10.1016/0038-1101(62)90111-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Oberflächenleitung und Oberflächenrekombination an der Grenze Silicium-ElektrolytZeitschrift für Naturforschung A, 1961
- Cross sections of midgap surface states in silicon by pulsed field effect experimentJournal of Physics and Chemistry of Solids, 1960
- Stabilization of Silicon Surfaces by Thermally Grown Oxides*Bell System Technical Journal, 1959
- The electrical structure of semiconductor surfacesJournal of Physics and Chemistry of Solids, 1959
- Surface States on Silicon and Germanium SurfacesPhysical Review B, 1957
- Field Effect in Germanium at High FrequenciesPhysical Review B, 1957
- Field-Induced Conductivity Changes in GermaniumPhysical Review B, 1956
- Surface States on Silicon and Germanium SurfacesPhysical Review B, 1956
- Physical Theory of Semiconductor SurfacesPhysical Review B, 1955
- On the Surface States Associated with a Periodic PotentialPhysical Review B, 1939