Optimization of a 193-nm silylation process for sub-0.25-um lithography

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Abstract
We have optimized a positive-tone silylation process using polyvinylphenol resist and dimethylsilyldimethylamine as the silylating agent. Imaging quality and process latitude have been evaluated at 193 nm using a 0.5-NA SVGL prototype exposure system. A low- temperature dry etch process was developed that produces vertical resist profiles resulting in large exposure and defocus latitudes, linearity of gratings down to 0.175 micrometers , and resolution of 0.15-micrometers gratings and isolated lines.

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