Capacitance detected magnetic resonance in γ-irradiated p+-i-n+silicon diodes
- 1 September 1986
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 1 (3) , 180-183
- https://doi.org/10.1088/0268-1242/1/3/004
Abstract
Magnetic resonance of defects in silicon p+-i-n+ diodes has been observed via the photocapacitance as well as via the dark capacitance under conditions of forward bias. The photovoltaic detected resonances are discussed in terms of capacitive and conductance components of the signals and sub-band-gap excitation has allowed the optical depth of a defect to be determined.Keywords
This publication has 3 references indexed in Scilit:
- PDMR and ODMR crystalline p+-i-n+silicon diodesJournal of Physics C: Solid State Physics, 1986
- Observation of Spin-Dependent Thermal Emission from Deep Levels in SemiconductorsPhysical Review Letters, 1983
- Spin effects in p+-i-n+a-Si:H cells; photovoltaic detected magnetic resonance (PDMR)Journal of Physics C: Solid State Physics, 1983