Marker studies of silicide formation, silicon self-diffusion and silicon epitaxy using radioactive silicon and Rutherford backscattering
- 1 March 1978
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 149 (1-3) , 629-633
- https://doi.org/10.1016/0029-554x(78)90941-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Growth mechanism for solid-phase epitaxy of Si in the Si 〈100〉/Pd2Si/Si(amorphous) system studied by a radioactive tracer techniqueJournal of Applied Physics, 1977
- Radioactive silicon as a marker in thin-film silicide formationApplied Physics Letters, 1977
- Dissociation mechanism for solid-phase epitaxy of silicon in the Si 〈100〉/Pd2Si/Si (amorphous) systemApplied Physics Letters, 1976
- Kinetics of the Initial Stage of Si Transport Through Pd‐Silicide for Epitaxial GrowthJournal of the Electrochemical Society, 1975