Electroluminescence from erbium and oxygen coimplanted GaN
- 30 September 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (14) , 2098-2100
- https://doi.org/10.1063/1.116892
Abstract
Room temperature operation of erbium and oxygen coimplanted GaN m-i-n (metal–insulator–n-type) diodes is demonstrated. Erbium related electroluminescence at λ=1.54 μm was detected under reverse bias after a postimplant anneal at 800°C for 45 min in flowing NH3. The integrated light emission intensity showed a linear dependence on applied reverse drive current.Keywords
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