The role of lattice matching in improving the performance of PbSnTe IR photodiodes

1 March 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (3) , 66-68
https://doi.org/10.1109/EDL.1982.25481

Abstract

The role of lattice matching in determining the quantum efficiency of heterostructure PbSnTe photodiodes has been investigated. It has been established that a mismatch of less than 2 × 10-4results in a photodiode with quantum efficiency of ∼ 43%, very close to the maximum 50% possible without an anti-reflection coating. This compares with a value of 28% reported in the case of a heterojunction with a mismatch of 4 × 10-3. The increase in the quantum efficiency is attributed to the high crystalline quality at the heteroface and its vicinity in the lattice-matched system, in contrast to a high defect density found in the mismatched system.

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