Nonbolometric laser-induced voltage signals in thin films at room temperature
- 1 August 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (5) , 2313-2319
- https://doi.org/10.1103/physrevb.44.2313
Abstract
We report on detailed studies of laser-induced voltage signals observed in unbiased thin films at room temperature. The induced signals are measured as a function of incident energy, bias current, light polarization, and wavelength. The observed signals are remarkable because of their magnitude, up to 2 V across 4 Ω at 30 mJ/, and because they represent potentials which are forbidden by the known crystal symmetry of if two obvious explanations, pyroelectricity and off-diagonal thermoelectricity, are considered. The signal proves to be independent of the polarization of light as well as its wavelength for λ=1064, 532, and 355 nm. Our measurements provide strong evidence that the observed signals do not have a bolometric origin. The signal amplitude is proportional to the magnitude of the incident energy and not to its energy density. The time constant of the bolometric response, determined by applying a bias current, is different from that of the transient. The dependence of the time constant, , of the transient on the film thickness is not unique. For films with thicknesses below 4000 Å, agrees with simulated thermal diffusion times. Thicker films appear to show time constants independent of thickness, in contrast with predictions for thermal diffusion. Although the reflectivity is a symmetric function of the angle of incidence about the normal, the voltage signals are not.
Keywords
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