Latest developments in the growth of CdxHg1−xTe and CdTe–HgTe superlattices by molecular beam epitaxy

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Abstract
We present here a general survey of our activity since 1981. We show that n- or p-type CdxHg1−xTe with low carrier concentration, high mobility and crystal perfection limited by the substrate itself can be grown by molecular beam epitaxy (MBE) between 180 and 210 °C onto CdTe(111) and (100) orientation. We report for the first time the characteristics of a photovoltaic device processed on a p-type CdxHg1−xTe MBE layer which proves that this material can be grown by MBE with a detection device specification. We also give some information concerning 100 periods of 224 Å CdTe–HgTe superlattice previously reported.