Fast and slow states at the interface of amorphous silicon and silicon nitride
- 16 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (24) , 1672-1674
- https://doi.org/10.1063/1.96851
Abstract
The effects of a graded composition layer at the amorphous silicon/nitride interface are studied using transient photoconductivity. The graded layer causes a large increase in the density of slow states (electrons trapped within the nitride), but does not influence the fast interface states. The kinetics of trapping and release are measured and a model of field assisted hopping and thermal excitation is proposed. The different origins of slow and fast states are also discussed.Keywords
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