Excimer laser induced deposition of InP

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Abstract
InP thin films have been deposited on several types of substrates, via 193 nm excimer laser induced photochemical decomposition of In(CH3)3 and P(CH3)3 gas-phase precursors. Deposition results from gas-phase photochemistry, while surface irradiation stimulates removal of carbon and crystallization. InP films deposited on (100)InP substrates have been studied by scanning electron microscopy, transmission electron microscopy, and Rutherford backscattering spectroscopy (RBS). Films range from amorphous to epitaxial, depending upon conditions (most notably fluence incident on the substrate). The best film deposited at ∼0.1 J/cm2 and at a steady-state temperature of only ∼320 ° C, had an RBS spectrum indistinguishable from that of the single crystal substrate. To our knowledge, this is the first report of a 100% photochemically induced deposition of an epitaxial, III–V compound semiconductor thin film (i.e., no growth in the absence of light), and also the first report of an epitaxial InP film deposited from organometallic precursors at a steady-state temperature below the incongruent decomposition temperature of InP (∼350 °C). A more detailed account of this invited paper has been published elsewhere.1,2

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