Further Studies of Electroluminescence Spectra of the n-GaP Semiconductor Electrode in Relation with the Surface-trapped Holes
- 1 November 1982
- journal article
- Published by Oxford University Press (OUP) in Bulletin of the Chemical Society of Japan
- Vol. 55 (11) , 3390-3393
- https://doi.org/10.1246/bcsj.55.3390
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Electro-and photo-luminescence spectra in various n-type semiconductors in relation with anodic reaction intermediatesChemical Physics Letters, 1982
- Surface Intermediates of an n‐Type Gallium Phosphide Electrode as Related with the Shifts of the Surface Band Energy Induced by Oxidants in SolutionJournal of the Electrochemical Society, 1981
- Photoanodic Dissolution Reaction of an n‐Type Gallium Phosphide Electrode and Its Effect on Energies of the Electronic Bands at the SurfaceJournal of the Electrochemical Society, 1980
- PhotoelectrochemistryScience, 1980
- Solar photoelectrolysis with semiconductor electrodesPublished by Springer Nature ,1979
- Photoelectrochemistry and heterogeneous photo-catalysis at semiconductorsJournal of Photochemistry, 1979
- Electrolytic decomposition and photodecomposition of compound semiconductors in contact with electrolytesJournal of Vacuum Science and Technology, 1978
- The Role of Energy Levels in Semiconductor‐Electrolyte Solar CellsJournal of the Electrochemical Society, 1978
- Thermodynamic Potential for the Anodic Dissolution of n-Type SemiconductorsJournal of the Electrochemical Society, 1977
- On the stability of semiconductor electrodes against photodecompositionJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1977