Polarization bistability in semiconductor lasers
- 1 January 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (1) , 16-18
- https://doi.org/10.1063/1.95834
Abstract
A new kind of optical bistability, the polarization bistability, is observed in InGaAsP/InP lasers operating near the polarization transition temperature. This bistability is characterized by large hysteresis loops in the polarization-resolved power versus current characteristics. Fast switching between the two stable polarization states by injection of current pulses is also demonstrated.Keywords
This publication has 11 references indexed in Scilit:
- Direct polarization switching in semiconductor lasersApplied Physics Letters, 1984
- Spectral bistability in coupled cavity semiconductor lasersApplied Physics Letters, 1984
- Optical bistability and nonlinear resonance in a resonant-type semiconductor laser amplifierElectronics Letters, 1983
- V-grooved substrate buried heterostructure InGaAsP/InP laser emitting at 1.3 µm wavelengthIEEE Journal of Quantum Electronics, 1982
- Longitudinal mode self-stabilization in semiconductor lasersJournal of Applied Physics, 1982
- Interaction of a bistable injection laser with an external optical cavityApplied Physics Letters, 1982
- Longitudinal mode behavior of transverse-mode-stabilized InGaAsP/InP double-heterostructure laserApplied Physics Letters, 1981
- Transient response of hybrid bistable optical devicesApplied Physics Letters, 1979
- Spectral hole burning in GaAs junction lasersApplied Physics Letters, 1979
- Longitudinal-mode behaviors of mode-stabilized AlxGa1−xAs injection lasersJournal of Applied Physics, 1978