Correlation of Electrical, Structural, and Optical Properties of Erbium in Silicon
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Local structure of 1.54-μm-luminescence Er3+ implanted in SiApplied Physics Letters, 1992
- Optically detected Auger recombinations in erbium- and ytterbium- doped InPApplied Physics Letters, 1991
- Evaluation of erbium-doped silicon for optoelectronic applicationsJournal of Applied Physics, 1991
- The electrical and defect properties of erbium-implanted siliconJournal of Applied Physics, 1991
- Impurity enhancement of the 1.54-μm Er3+ luminescence in siliconJournal of Applied Physics, 1991
- Microstructure of erbium-implanted SiApplied Physics Letters, 1991
- Electrical and Optical Properties of Erbium in MBE Silicon and Si/Ge AlloysMRS Proceedings, 1991
- Localized exciton bound to an isoelectronic trap in siliconPhysical Review B, 1980