Effect of plastic deformation on the EPR spectrum of semi-insulating GaAs:Cr

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16 August 1980

journal article
research article
Published by Wiley in Physica Status Solidi (a)

Vol. 60 (2) , K149-K152
https://doi.org/10.1002/pssa.2210600250

Abstract

No abstract available

This publication has 7 references indexed in Scilit:

A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy
Applied Physics A, 1980
Direct evidence for the nonassignment to oxygen of the main electron trap in GaAs
Journal of Applied Physics, 1979
Strongly anisotropic field ionization of a common deep level in GaAs
Journal de Physique Lettres, 1979
Stacking fault energy and ionicity of cubic III–V compounds
Physica Status Solidi (a), 1978
EPR of ${Cr}^{2 +}$ ( $3 d^{4}$ ) in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversion
Physical Review B, 1977
EPR of $Cr (3 d^{3})$ in GaAs—evidence for strong Jahn-Teller effects
Physical Review B, 1977
Photoelectronic properties of high-resistivity GaAs : Cr
Journal of Applied Physics, 1976