Infrared Imaging of the Nanometer-Thick Accumulation Layer in Organic Field-Effect Transistors

Preprint

9 February 2006

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0602229

Abstract

We report on infrared (IR) spectro-microscopy of the electronic excitations in nanometer-thick accumulation layers in FET devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the critical role of the gate insulator in defining relevant length scales. This work demonstrates the unique potential of IR spectroscopy for the investigation of physical phenomena at the nanoscale occurring at the semiconductor-insulator interface in FET devices.

Keywords

NANOMETER THICK ACCUMULATION
THICK ACCUMULATION LAYERS
FIELD EFFECT TRANSISTORS
INFRARED IMAGING
IR SPECTROSCOPY
FET

All Related Versions

Version 1, 2006-02-09, ArXiv
Published version: Nano Letters, 6 (2), 224.

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