Polarization self-modulation at multi-gigahertz frequencies in an external-cavity semiconductor laser
- 1 July 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (7) , 467-469
- https://doi.org/10.1109/68.56628
Abstract
Polarization self-modulation achieved at frequencies far above the relaxation oscillation frequency in an external-cavity hybrid ring semiconductor laser without the need for any high-speed electronics is discussed. This demonstrates that polarization modulation may be a viable alternative for generating controlled signals at extremely high frequencies ( approximately=100 GHz) for use as microwave and millimeter-wave optical carriers.Keywords
This publication has 6 references indexed in Scilit:
- High-frequency polarization self-modulation and chaotic phenomena in external cavity semiconductor lasersApplied Physics Letters, 1990
- 108 GHz passive mode locking of a multiple quantum well semiconductor laser with an intracavity absorberApplied Physics Letters, 1990
- Generation of bandwidth-limited 2 ps pulses with 100 GHz repetition rate from multisegmented injection laserElectronics Letters, 1989
- Efficient narrow-band direct modulation of semiconductor injection lasers at millimeter wave frequencies of 100 GHz and beyondApplied Physics Letters, 1988
- Electro-optic frequency- and polarization-modulated injection laserApplied Physics Letters, 1980
- Double-heterostructure GaAs-AlxGa1−xAs [110] p-n-junction-diode modulatorJournal of Applied Physics, 1976