Free to bound transition-related electroluminescence in 3C and 6H SiC p+–n junctions at room temperature
- 1 August 1996
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (3) , 1763-1767
- https://doi.org/10.1063/1.362974
Abstract
The room temperature electroluminescence spectra of moderately nitrogen doped (1×1017 cm−3) 3C and 6H SiC p+–n junctions are studied as a function of forward current. The free to bound transition due to the unintentional, deep boron (defect) center is dominant at low forward bias, while the free to bound transitions due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. These results can be explained using Shockley–Read–Hall analysis of the recombination rate as a function of bias. The origin of boron related electroluminescence is suggested to be primarily from recombination within the depletion region, while aluminum and nitrogen related electroluminescence is attributed to recombinations in the minority carrier injection regions.This publication has 6 references indexed in Scilit:
- Thermal capacitance spectroscopy of epitaxial 3C and 6H-SiC pn junction diodes grown side by side on a 6H-SiC substrateApplied Physics Letters, 1995
- Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substratesIEEE Transactions on Electron Devices, 1994
- Electrical and optical characterization of SiCPhysica B: Condensed Matter, 1993
- Hall effect and infrared absorption measurements on nitrogen donors in 6H-silicon carbideJournal of Applied Physics, 1992
- Surface and perimeter recombination in GaAs diodes: an experimental and theoretical investigationIEEE Transactions on Electron Devices, 1991
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957