Phonon energy dependence of scattering in quasi-two-dimensional electron gases at low temperature
- 15 December 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (12) , 4942-4944
- https://doi.org/10.1063/1.339799
Abstract
We investigate the scattering of electrons in a quasi-two-dimensional electron gas by acoustic phonons at low temperatures. In contrast to scattering at high temperatures, we find that at low temperatures the average scattering rate is dominated by phonon modes with energies much larger than kT. An analytic calculation of either the energy-loss rate or the mobility depends on approximations which are valid only for small phonon wave numbers. Because of the contribution of high-energy phonons, these approximations remain inappropriate to much lower temperatures than previously supposed. For most cases, we find that the approximate analytic solution differs significantly from a more accurate solution obtained by numerical integration.This publication has 16 references indexed in Scilit:
- Exact solution of a transport equation for hot-electron effects in semiconductors and metalsPhysical Review B, 1987
- Electron-energy-loss rates inAs/GaAs heterostructures at low temperaturesPhysical Review B, 1987
- Energy relaxation of two-dimensional electrons and the deformation potential constant in selectively doped AlGaAs/GaAs heterojunctionsApplied Physics Letters, 1986
- Electron heating in a multiple-quantum-well structure below 1 KPhysical Review B, 1986
- Hot electrons in a GaAs heterolayer at low temperatureJournal of Applied Physics, 1982
- Hot Electrons in Si(100) Inversion Layer at Low Lattice TemperaturesJournal of the Physics Society Japan, 1982
- Two-dimensional electron transport in semiconductor layers II: ScreeningJournal of Vacuum Science and Technology, 1981
- Two-dimensional electron transport in semiconductor layers. I. Phonon scatteringAnnals of Physics, 1981
- Determination of the phonon modes involved in the carrier-phonon interaction in silicon inversion layers at low temperatures by nonohmic transport measurementsPhysical Review B, 1980
- Hot-carrier effects in high magnetic fields in silicon inversion layers at low temperatures:channelPhysical Review B, 1977